Author/Authors :
Lo، نويسنده , , Shun-Tsung and Chen، نويسنده , , Kuang Yao and Su، نويسنده , , Yi-Chun and Liang، نويسنده , , C.-T. and Chang، نويسنده , , David Y.H. and Kim، نويسنده , , Gil-Ho and Wu، نويسنده , , J.-Y. and Lin، نويسنده , , Sheng-Di، نويسنده ,
Abstract :
We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T , a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T .
