Title of article
Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence
Author/Authors
Yang، نويسنده , , M.D. and Liao، نويسنده , , W.C. and Shu، نويسنده , , G.W. and Liu، نويسنده , , Y.K. and Shen، نويسنده , , J.L. and Wu، نويسنده , , C.H. and Chou، نويسنده , , W.C. and LEE، نويسنده , , Y.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1217
To page
1220
Abstract
A photoluminescence (PL) technique is presented to measure the junction temperature of GaAs solar cells. The technique utilizes the pulse-width modulation of excitation laser and the temperature dependence of PL spectra. The apparent change of PL energy on duty cycle can be advantageously used for the determination of the junction temperature. Varying the duty cycle from 10% to 75% causes an increase of 2.9 K in the junction temperature of GaAs solar cells. The carrier temperature of the junction layer was studied to confirm the result obtained from the pulse-width modulation PL.
Keywords
D. Thermodynamic properties , E. Luminescence , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766902
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