Title of article :
Polarization switching in near-stoichiometric Zn:LiNbO3 at high temperatures
Author/Authors :
Reddy، نويسنده , , J.N. Babu and Bhat، نويسنده , , H.L. and Elizabeth، نويسنده , , Suja، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
1258
To page :
1261
Abstract :
The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature ( T C ) . Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures, and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching.
Keywords :
A. Stoichiometric lithium niobate , A. Ferroelectric crystals , D. Polarization switching
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1766925
Link To Document :
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