Title of article :
Landau levels and magnetopolaron effect in dilute GaAs:N
Author/Authors :
Krstaji?، نويسنده , , P.M. and Peeters، نويسنده , , F.M. and Helm، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
5
From page :
1575
To page :
1579
Abstract :
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħ ω c .
Keywords :
C. Impurities in semiconductors , A. Semiconductors , D. Cyclotron resonance
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1767090
Link To Document :
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