Author/Authors :
Wang، نويسنده , , Xiaofei and Lu، نويسنده , , Xiaomei and Bo، نويسنده , , Huifeng and Liu، نويسنده , , Yaoyang and Shen، نويسنده , , Yanchi and Wu، نويسنده , , Xiaobo and Cai، نويسنده , , Meng-Wei and Kan، نويسنده , , Yi and Zhang، نويسنده , , Chao and Liu، نويسنده , , Yunfei and Huang، نويسنده , , Fengzhen and Zhu، نويسنده , , Jinsong، نويسنده ,
Abstract :
Strontium titanate films with high a -axis orientation [ a ( 100 ) = 94.1 % ] and random orientation were deposited on (111) Pt/Ti/ SiO2/Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 °C. X-ray diffraction found that the degree of a -axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed.
