Title of article
Island formation during deposition or etching
Author/Authors
Bartelt، نويسنده , , M.C. and Hannon، نويسنده , , JB Guiard-Schmid، نويسنده , , A.K. and Stoldt، نويسنده , , C.R. and Evans، نويسنده , , J.W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
31
From page
373
To page
403
Abstract
The behavior of a non-equilibrium lattice-gas model for irreversible formation of two-dimensional islands during submonolayer deposition or etching is examined in detail. In particular, recent developments in describing capture of diffusing species by islands of various sizes are reviewed. Both exact and geometric descriptions of capture are discussed, elucidating the role of the local environment of the islands, and its dependence on island size, on adatom capture and individual island growth rates. Limitations in mean-field treatments of capture are noted. These results are applied to characterize the growth of Ag islands on Ag(100), Cu/Co islands on Ru(0001), and pits on Si(001) etched with molecular oxygen.
Keywords
growth , Nucleation , Copper , Ruthenium , Silicon , Low-index single crystal surfaces. , Oxygen , Models of non-equilibrium phenomena , Low-energy electron microscopy , Scanning tunneling microscopy , epitaxy , Etching , Cobalt
Journal title
Colloids and Surfaces A Physicochemical and Engineering Aspects
Serial Year
2000
Journal title
Colloids and Surfaces A Physicochemical and Engineering Aspects
Record number
1768048
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