Author/Authors :
Song، نويسنده , , H.P. and Zheng، نويسنده , , G.L. and Yang، نويسنده , , A.L. and Guo، نويسنده , , Y. and Wei، نويسنده , , H.Y. and Li، نويسنده , , C.M. and YANG، نويسنده , , S.Y. and Liu، نويسنده , , X.L. and Zhu، نويسنده , , Q.S. and Wang، نويسنده , , Z.G.، نويسنده ,
Abstract :
Both In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite ( w -)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w -ZnO(101) ∥ b c c - In 2 O 3 ( 111 ) . We have measured the valence band offset (VBO) of w -ZnO(101)/bcc-In2O3(111) heterojunction to settle the question of the band line-up of the ZnO/ In2O3 heterojunction. Our result shows that the valence band maximum (VBM) of ZnO (101) lies ∼ 0.49 eV below the VBM of bcc- In2O3(111), and the conduction band maximum (CBM) of w -ZnO(101) is about 0.05 eV lower than the CBM of bcc-In2O3(111), which shows that their CBMs are nearly at the same level.
Keywords :
A. In2O3 , B. MOCVD , E. Photoelectron spectroscopies , A. ZnO
