Title of article :
Effects of Zr and Ti doping on the dielectric response of : A comparative first-principles study
Author/Authors :
Dutta، نويسنده , , Gargi and Saha، نويسنده , , Srijan Kumar and Waghmare، نويسنده , , Umesh V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
3
From page :
2020
To page :
2022
Abstract :
Zr doping in ceria (CeO2) results in enhanced static dielectric response compared to pure ceria. On the other hand, Ti doping in ceria keeps its dielectric constant unchanged. We use first-principles density functional theory calculations based on pseudopotentials and a plane wave basis to determine electronic properties and dielectric response of Zr/Ti-doped and oxygen-vacancy-introduced ceria. Softening of phonon modes is responsible for the enhancement in dielectric response of Zr-doped ceria compared to that of pure ceria. The ceria–zirconia mixed oxides should have potential use as high- k materials in the semiconductor industry.
Keywords :
E. DFT , A. Semiconductor , A. Ceria , D. Dielectric constant
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1768171
Link To Document :
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