Title of article
Bipolar resistive switching in heterostructures: Bismuth oxide/normal metal
Author/Authors
Tulina، نويسنده , , N.A. and Borisenko، نويسنده , , I.Yu. and Ionov، نويسنده , , A.M. and Shmyt’ko، نويسنده , , I.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
2089
To page
2092
Abstract
Thin filmed heterojunctions Ag/Bi/BiOx/Ag were fabricated and the effect of frequency of applied ac voltage on bipolar resistive switching in the obtained heterojunctions was observed for the first time. It has been found that the frequency dependence of the effect has a universal character for some oxide compounds. This observation confirms the significant role of oxygen-ion migration in the resistive switching phenomena in structures based on oxide compounds.
Keywords
A. Metal oxides , D. Resistive switchings , C. Interface structures , D. Colossal electroresistance
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1768222
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