Photovoltaic effects of p–n heterojunction device

Photoirradiation effects of poly(p-pyridyl vinylene), PPyV/poly(3-hexylthiophene), P3HT and polypyridine, PPy/poly(2-methoxy-5-dodecyloxy-p-phenylene vinylene), MDOPPV heterostructure photoelectric conversion devices have been investigated. The photovoltaic characteristics of the heterostructure photoelectric conversion device are considerably improved from those in a single-layer photoelectric conversion device. Quenching of photoluminescence both in the PPyV layer film and in the P3HT layer film has been observed in the PPyV/P3HT heterostructure film. The observed photoirradiation effects of the heterostructure device have been discussed in terms of interfacial photoinduced charge transfer between P3HT and PPyV.