• Title of article

    Band gap and chemically ordered domain structure of a graphene analogue

  • Author/Authors

    Venu، نويسنده , , K. and Kanuri، نويسنده , , S. and Raidongia، نويسنده , , K. and Hembram، نويسنده , , K.P.S.S. and Waghmare، نويسنده , , U.V. and Datta، نويسنده , , R.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    2262
  • To page
    2265
  • Abstract
    Chemically synthesized few layer graphene analogues of BxCyNz are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase, electronic structure and band gap. HREELS band gap studies of a BxCyNz composition reveal absorption edges at 2.08, 3.43 and 6.01 eV, indicating that the BxCyNz structure may consist of domains of different compositions. The K -absorption edge energy position of the individual elements in BxCyNz is determined and compared with h-BN and graphite. An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of BxCyNz.
  • Keywords
    A. BCN , A. Semiconductor , D. Band gap , E. EELS
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1768346