Title of article :
Band gap and chemically ordered domain structure of a graphene analogue
Author/Authors :
Venu، نويسنده , , K. and Kanuri، نويسنده , , S. and Raidongia، نويسنده , , K. and Hembram، نويسنده , , K.P.S.S. and Waghmare، نويسنده , , U.V. and Datta، نويسنده , , R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
2262
To page :
2265
Abstract :
Chemically synthesized few layer graphene analogues of BxCyNz are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase, electronic structure and band gap. HREELS band gap studies of a BxCyNz composition reveal absorption edges at 2.08, 3.43 and 6.01 eV, indicating that the BxCyNz structure may consist of domains of different compositions. The K -absorption edge energy position of the individual elements in BxCyNz is determined and compared with h-BN and graphite. An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of BxCyNz.
Keywords :
A. BCN , A. Semiconductor , D. Band gap , E. EELS
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1768346
Link To Document :
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