Title of article
The effects of vacancy defects and nitrogen doping on the thermal conductivity of armchair (10, 10) single-wall carbon nanotubes
Author/Authors
Chien، نويسنده , , Shih-Kai and Yang، نويسنده , , Yue-Tzu and Chen، نويسنده , , Cha’o-Kuang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
1004
To page
1008
Abstract
The influence of vacancy defects and nitrogen doping on the thermal conductivity of typical armchair (10, 10) single-walled carbon nanotubes is investigated using molecular dynamics (MD) simulation. The second-generation reactive empirical bond order potential and Tersoff potential are used to describe the interatomic interactions and the thermal conductivities are calculated using the Müller-Plathe approach (also called non-equilibrium MD simulation). Vacancy defects decrease the thermal conductivity whereas the substitution of nitrogen at vacancy sites improves the thermal conductivity. Quantum correction of the calculated results produces a thermal conductance temperature dependence that is in qualitative agreement with experimental data.
Keywords
A. Carbon nanotubes , A. Nanostructures , D. Thermal conductivity , D. phonons
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1768464
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