Defects in wide band gap semiconductors: magneto-optical double resonance studies

Recent results obtained in the investigation of shallow donors in GaN with optical detection of electron paramagnetic resonance via the so-called yellow luminescence are reviewed as well as recent results on the silicon vacancy in SiC using optical detection of electron paramagnetic resonance via the magnetic circular dichroism of the absorption. The power of these double resonance methods is illustrated. The possibility of electrical detection of electron paramagnetic resonance in the electrical conductivity is also briefly discussed as future development.