Title of article
In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP
Author/Authors
Dinia، نويسنده , , A and Zollo، نويسنده , , G and Pizzuto، نويسنده , , C and Vitali، نويسنده , , G and Kalitzova، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
385
To page
388
Abstract
Low-power pulsed-laser annealing has been applied to Zn+-implanted InP samples in N2 atmosphere, attaining structural reordering and high electrical activation. The in-depth hole carrier concentration distribution has been compared with the in-depth implanted Zn distribution: a [Zn] plateau appears where the activation is about 100%.
Keywords
A. Semiconductors , B. Laser processing , C. Electronic transport
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1768939
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