Title of article
Electronic transitions of electrons bound to phosphorus donors in diamond
Author/Authors
Gheeraert، نويسنده , , E and Koizumi، نويسنده , , S and Teraji، نويسنده , , T and Kanda، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
577
To page
580
Abstract
A set of phosphorus doped CVD diamond films was investigated by infrared absorption spectroscopy. The photo-ionisation continuum intensity increases consistently with the phosphorus concentration. Two peaks, at 523 and 562 meV, were observed for the first time, and are attributed to electronic transitions from the phosphorus ground level to the 2P0 and 2P+/− excited states, in good agreement with the effective mass approximation. The optical ionisation energy deduced is 600 meV (±20 meV), consistent with Hall effect measurements.
Keywords
A. Semiconductors , C. Impurities in semiconductors , D. Electronic states (localized)
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769036
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