Title of article
Fluctuation-stimulated variable-range hopping
Author/Authors
Kozub، نويسنده , , V.I and Baranovskii، نويسنده , , S.D and Shlimak، نويسنده , , I، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
587
To page
591
Abstract
A qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced by surrounding sites with fluctuating occupations. A semiquantitative description of the hopping transport is given based on the assumption that fluctuations of energies of hopping sites have spectral density 1/f.
Keywords
A. Semiconductors , D. Electronic transport , D. Electronic states (localized) , D. Noise
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769042
Link To Document