Electron dynamics at a Ag/C60 metal–semiconductor interface

The dynamics of excited electrons in C60 for various film thicknesses down to approximately one monolayer have been investigated. Using time resolved two photon photoemission this gives a direct probe both for the electronic structure of the normally unoccupied states and the population and depopulation of these states. It is shown that the relaxation mechanism at the metal–semiconductor interface is quite different from the relaxation observed in the bulk of C60.