Author/Authors :
Son، نويسنده , , Yong Duck and Sik Cho، نويسنده , , Kyu and Yeol Yoo، نويسنده , , Seong and Uk Kwak، نويسنده , , Jong and Ho Kim، نويسنده , , Kyung and Jang، نويسنده , , Jin، نويسنده ,
Abstract :
We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8×10−11 A/μm at the drain voltage of −5 V and the gate voltage of 10 V.
