Title of article
History dependence of peak effect in CeRu2 and V3Si: an analogy with the random field Ising systems
Author/Authors
Chaudhary، نويسنده , , Sujeet and Rajarajan، نويسنده , , A.K. and Singh، نويسنده , , Kanwal Jeet and Roy، نويسنده , , S.B. and Chaddah، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
5
To page
8
Abstract
We present results of transport measurements showing distinct path dependence of the electrical resistance in the superconducting vortex state of single crystal samples of CeRu2 and V3Si. Resistance measured in the vortex state of both the systems prepared by field cooling (FC), indicates a relatively higher degree of disorder than when it is prepared by isothermal variation of field. Small oscillations of magnetic field modify the resistance in the FC state, highlighting the metastable nature of that state. An analogy is drawn with the FC state of the random-field Ising systems.
Keywords
A. Superconductors , D. Flux pinning and creep , D. Electronic transport , D. Phase transitions
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769107
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