Title of article :
An alternative way of linearizing the augmented plane-wave method
Author/Authors :
Sjِstedt، نويسنده , , E and Nordstrِm، نويسنده , , L and Singh، نويسنده , , D.J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
A new basis set for a full potential treatment of crystal electronic structures is presented and compared to that of the well-known linearized augmented plane-wave (LAPW) method. The basis set consists of energy-independent augmented plane-wave functions combined with local orbitals. Each basis function is continuous over the whole unit cell but it may have a discontinuous slope at the muffin-tin boundaries, i.e. at the surfaces of atomic centered, non-overlapping spheres. This alternative way to linearize the augmented plane-wave method is shown to reproduce the accurate results of the LAPW method, but using a smaller basis set size. The reduction in number of basis functions is most significant for open structures.
Keywords :
D. Electronic band structure , A. Surfaces and interfaces
Journal title :
Solid State Communications
Journal title :
Solid State Communications