Phonon sidebands of exciton bound to NN1 traps in GaAs1−xPx:N alloys

Using selective excitation technology, the phonon sidebands of NN1 pair emission are observed in GaAs1−xPx:N (x=0.88) alloys. Due to fluorescence line narrowing, the fine structure of phonon sidebands of NN1 pair emission, which is very similar to that of Nx in GaAs1−xPx:N and to that of NN1 in GaP:N, including TA, LA, LOAs and LO phonons, has been identified. The results experimentally confirm that the NN1 center does exist in GaAs1−xPx:N alloys.