Title of article :
Turing bifurcation during the nucleation process of a current density filament in n-GaAs
Author/Authors :
Aoki، نويسنده , , K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
203
To page :
207
Abstract :
The nucleation process in spatiotemporal structures of a current density filament in n-GaAs has been investigated under a dc+ac driving force Vdc+Vacsin 2πfdt at 4.2 K. With Vdc=0.8 V, Vac=666 mV and fd=100 kHz, we observe an S-shaped I–V curve caused by impact ionization avalanche of neutral shallow donors and subsequent formation of a well-defined current density filament. In the nucleation process, Turing bifurcation is observed at around the breakdown voltage, followed by a spatially periodic pattern of the current density as a pre-filament state.
Keywords :
A. Semiconductors , D. Electronic transport , E. Luminescence
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1769193
Link To Document :
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