Title of article :
Optical resonant modes in InGaN MQW/GaN micro-cone
Author/Authors :
Dai، نويسنده , , Jiang-Lun and Zhang، نويسنده , , Bei-Di Wang، نويسنده , , Ruo Peng and Lin، نويسنده , , Jing-Yu and Jiang، نويسنده , , Hong-Xing، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2002
Pages :
5
From page :
383
To page :
387
Abstract :
Arrays of InGaN MQW/GaN micro-cone cavities with a base diameter of 3.3 μm were fabricated by ion beam etching. The micro-cones consist of a 58 nm thick multiple quantum wells (MQW) of In0.22Ga0.78N/In0.06Ga0.94N as well as a 1.5 μm thick epilayer of GaN. By using a novel optical ray tracing method, we have figured out four main types of optical resonant cavities inside the three-dimensional micro-cone, including two Fabry–Perot modes types as well as two whispering gallery modes types. Optical resonant modes from a single micro-cone could be clearly observed in the photoluminescence spectra at temperature up to 200 K under a pumping power density two orders of magnitude lower than that for the III-nitride semiconductor micro-disk or micro-ring cavity. The corresponding mode spacings of the experimental results agree well with the calculated ones. The advantages of this new class of cavity are discussed. These findings are expected to have impact on the design of the UV/blue micro-cavity laser diodes.
Keywords :
Optical resonant modes , III-nitride semiconductor , Micro-cone , photoluminescence spectra , Micro-cavity , Micro-disk
Journal title :
Current Applied Physics
Serial Year :
2002
Journal title :
Current Applied Physics
Record number :
1769197
Link To Document :
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