Title of article
Initial stage of CdTe on Si(1 0 0) grown by MBE
Author/Authors
Jung، نويسنده , , H.S. and Kim، نويسنده , , H.J.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2002
Pages
3
From page
389
To page
391
Abstract
The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation.
Keywords
1) , 0 , Surface electronic structure , STM , ARPES , 0)2×1 , Te/Si(1 , 0 , CdTe/Si(0
Journal title
Current Applied Physics
Serial Year
2002
Journal title
Current Applied Physics
Record number
1769200
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