Title of article
Electrical conduction mechanism in amorphous Se80In20−xPbx films
Author/Authors
Majeed Khan، نويسنده , , M.A and Zulfequar، نويسنده , , M and Husain، نويسنده , , M، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2002
Pages
6
From page
401
To page
406
Abstract
DC conductivity measurements on thin films of a-Se80In20−xPbx (where x=0, 2, 6 and 10) are reported in the temperature range 200–400 K. The density of states near the Fermi level is calculated using the DC conductivity (Mott parameters). The conduction in the low-temperature region is found to be due to variable range hopping while that in the high-temperature region is due to thermally assisted tunneling of the carriers in the localized states near the band edge.
Keywords
Density of states , DC conductivity , Thin films , Amorphous semiconductor
Journal title
Current Applied Physics
Serial Year
2002
Journal title
Current Applied Physics
Record number
1769205
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