Electrical conduction mechanism in amorphous Se80In20−xPbx films

DC conductivity measurements on thin films of a-Se80In20−xPbx (where x=0, 2, 6 and 10) are reported in the temperature range 200–400 K. The density of states near the Fermi level is calculated using the DC conductivity (Mott parameters). The conduction in the low-temperature region is found to be due to variable range hopping while that in the high-temperature region is due to thermally assisted tunneling of the carriers in the localized states near the band edge.