Title of article
Growth and characterization of epitaxial Ba2Bi4Ti5O18 films deposited by pulsed laser ablation
Author/Authors
James ، نويسنده , , A.R and Pignolet، نويسنده , , A and Senz، نويسنده , , S and Zakharov، نويسنده , , N.D and Hesse، نويسنده , , D، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
249
To page
253
Abstract
Optimal conditions for the growth of eptiaxial quality layers of ferroelectric Ba2Bi4Ti5O18 films, by pulsed laser ablation have been determined. The ferroelectric layer was deposited on a stack of buffer layers comprising LaNiO3/CeO2/YSZ. All the layers in the buffer stack were deposited by excimer laser ablation as well. Films on large area Si(100) wafers, 3 inches in diameter showed good thickness and compositional uniformity. The quality of epitaxy of the oriented films was studied with the help of X-ray diffraction, scanning force microscopy (SFM) and cross-section transmission electron microscopy (XTEM) techniques. Ferroelectric hysteresis loops were recorded with values of Ps and Pr of 1.3 μC/cm2 and 0.6 μC/cm2, respectively.
Keywords
A. Ferroelectrics , A. Thin films , B. Epitaxy , B. Laser processing
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769216
Link To Document