Author/Authors :
Shu، نويسنده , , C.K. and Lee، نويسنده , , W.H. and Pan، نويسنده , , Y.C. and Chen، نويسنده , , C.C. and Lin، نويسنده , , H.C and Ou، نويسنده , , J and Chen، نويسنده , , W.H. and Chen، نويسنده , , W.K and Lee، نويسنده , , M.C، نويسنده ,
Abstract :
The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects.
Keywords :
C. Impurities in semiconductors , D. Optical properties , E. Luminescence , D. phonons
