Title of article :
High-pressure Raman scattering from GaPO4
Author/Authors :
Peters، نويسنده , , M.J and Grimsditch، نويسنده , , M and Polian، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The pressure dependence of the phonons in GaPO4 has been investigated up to 18 GPa using Raman spectroscopy. The existence of sharp Raman lines above the phase transition at approximately 11 GPa is a clear indication that the high-pressure phase is crystalline and not amorphous. Two phonons in the low-pressure phase exhibit soft mode behavior.
Keywords :
C. Crystal structure and symmetry , D. phonons , E. Inelastic light scattering , D. Phase transitions
Journal title :
Solid State Communications
Journal title :
Solid State Communications
