High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

Depth profiles of ultralow energy (0.2–0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectroscopy. The obtained boron profiles roughly agree with TRIM simulation even at 0.2-keV B ion implantation.