Title of article :
Ion-induced emission microscopies
Author/Authors :
Doyle، نويسنده , , B.L. and Walsh، نويسنده , , D.S. and Vizkelethy، نويسنده , , G. and Rossi، نويسنده , , P. A. McDaniel، نويسنده , , F.D. and Schenkel، نويسنده , , T. J. McDonald، نويسنده , , J. and Hamza، نويسنده , , A.V.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Pages :
4
From page :
31
To page :
34
Abstract :
New emission-based MeV nuclear microscopies have been in the process of development for the past four years. These techniques all fall under the heading of ion-induced emission microscopy (I-IEM), and the first to be developed was ion-electron emission microscopy (IEEM). With I-IEM the ion beam is not focused, but instead, secondary particles emitted when a single-ion strikes the sample are projected at great magnification onto a high efficiency single particle detector generating position signals. These X and Y signals are then put into coincidence with other signals made by this same ion in a fashion completely analogous to traditional nuclear microprobe analysis. In this paper, we update the current state of I-IEMs, which currently includes IEEM and highly charged ion-secondary ion mass spectroscopy (HCI-SIMS or IIEM) and ion-photon emission microscopy. At the present time none of these microscopies have atomic resolution, but the potential exists for resolution adequate for many scientific and nanotechnology applications.
Keywords :
Radiation effects , Nuclear microscopy , Emission microscopy
Journal title :
Current Applied Physics
Serial Year :
2003
Journal title :
Current Applied Physics
Record number :
1769316
Link To Document :
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