Structure analysis of the Si(1 1 1)-3×3-Sb surface by means of CAICISS combined with LEED–AES–RBS techniques

The composition and atomic arrangement of the Si(1 1 1)-3×3-Sb surface have been studied by means of co-axial impact collision ion scattering spectroscopy combined with low energy electron diffraction, Auger electron spectroscopy and Rutherford backscattering spectrometry techniques. It is found that the Sb/Si(1 1 1) surface forms the 3×3 structure at a coverage of 0.90 ML, which is determined by RBS. The azimuthal angle scan is also found to show prominent focussing peaks at ±12° around the (1 1 2) planes at a polar angle of 13°. It is determined from the azimuthal angle scan that the Si(1 1 1)-3×3-Sb surface forms the trimer centered at the T4 site and the spacing of Sb–Sb in the trimer is 2.8±0.05 Å.