Title of article :
Spin-flip Raman scattering in Mn-doped GaAs: exchange interaction and g factor renormalization
Author/Authors :
V.F. Sapega، نويسنده , , V.F. and Ruf، نويسنده , , T. and Cardona، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
We discuss exchange interaction in neutral acceptors (A0) and acceptor-bound excitons (A0X) in Mn-doped GaAs. We have measured, by means of spin-flip Raman scattering, the constant of antiferromagnetic exchange between valence band holes and electrons in the Mn 3d5 shell, the g-factor of electrons in the inner Mn shell, and the g-factor of the A0 center. The strong coupling of 3d5 Mn core electrons with conduction electrons leads to a temperature and magnetic-field dependent g-factor renormalization, and intense multi-spin-flip Raman scattering occurs.
Keywords :
E. Inelastic light scattering , A. Semiconductors , D. Electronic states (localized) , D. Optical properties , D. Crystal and ligand fields
Journal title :
Solid State Communications
Journal title :
Solid State Communications