• Title of article

    STM observation of Coulomb staircase behavior through C60 clusters

  • Author/Authors

    Noguchi، نويسنده , , Yutaka and Suzue، نويسنده , , Yuma and Iwamoto، نويسنده , , Mitsumasa، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2003
  • Pages
    3
  • From page
    397
  • To page
    399
  • Abstract
    Two samples of C60 clusters were prepared on highly oriented pyrolytic graphite (HOPG) substrate by thermal evaporation. One is ∼1 nm and the other is ∼15 nm in radius. The current flowing across C60 clusters was measured using scanning tunneling microscope in atmosphere at room temperature. Coulomb staircase behavior was successively observed in the current–voltage (I–V) characteristics. Interestingly, the capacitances between HOPG and C60 clusters, estimated from the I–V characteristics, were almost the same between these two samples. We discussed this result taking into account the relaxation and localization time of electrons injected into C60 clusters.
  • Keywords
    C60 , Coulomb staircase , STM
  • Journal title
    Current Applied Physics
  • Serial Year
    2003
  • Journal title
    Current Applied Physics
  • Record number

    1769412