Title of article
STM observation of Coulomb staircase behavior through C60 clusters
Author/Authors
Noguchi، نويسنده , , Yutaka and Suzue، نويسنده , , Yuma and Iwamoto، نويسنده , , Mitsumasa، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
3
From page
397
To page
399
Abstract
Two samples of C60 clusters were prepared on highly oriented pyrolytic graphite (HOPG) substrate by thermal evaporation. One is ∼1 nm and the other is ∼15 nm in radius. The current flowing across C60 clusters was measured using scanning tunneling microscope in atmosphere at room temperature. Coulomb staircase behavior was successively observed in the current–voltage (I–V) characteristics. Interestingly, the capacitances between HOPG and C60 clusters, estimated from the I–V characteristics, were almost the same between these two samples. We discussed this result taking into account the relaxation and localization time of electrons injected into C60 clusters.
Keywords
C60 , Coulomb staircase , STM
Journal title
Current Applied Physics
Serial Year
2003
Journal title
Current Applied Physics
Record number
1769412
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