Study of density of localized states in a-GaxSe100−x alloys using SCLC measurements

DC conductivity measurements have been made as a function of temperature and electric field on a-GaxSe100−x (0⩽x⩽10) samples, in order to study the effect of the electric field and temperature on the conduction mechanism. The present paper reports the measurements on space charge limited conduction (SCLC) in vacuum evaporated amorphous thin films of a-GaxSe100−x where 0⩽x⩽10. At high fields (∼104 V/cm), the current could be fitted to the theory of space charge limited conduction, in case of uniform distribution of localized states in the mobility gap of these materials. The addition of Gallium (Ga) in a-GaxSe100−x results in an increase in the density of localized states and hence an increase in conductivity.