Author/Authors :
Aleshin، نويسنده , , A.N. and Chu، نويسنده , , S.W. and Kozub، نويسنده , , V.I. and Lee، نويسنده , , S.W. and LEE، نويسنده , , J.Y. and Lee، نويسنده , , S.H and Kim، نويسنده , , D.W. and Park، نويسنده , , Y.W.، نويسنده ,
Abstract :
We have studied the current–voltage (I–V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300–1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I–V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.
Keywords :
Temperature dependent I–V characteristics , Field effect transistor (FET) , Tunneling conduction at low temperature , Polydiacetylene (PDA) thin film
