Title of article
Non-Ohmic conduction in polydiacetylene thin films
Author/Authors
Aleshin، نويسنده , , A.N. and Chu، نويسنده , , S.W. and Kozub، نويسنده , , V.I. and Lee، نويسنده , , S.W. and LEE، نويسنده , , J.Y. and Lee، نويسنده , , S.H and Kim، نويسنده , , D.W. and Park، نويسنده , , Y.W.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2005
Pages
5
From page
85
To page
89
Abstract
We have studied the current–voltage (I–V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300–1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I–V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.
Keywords
Temperature dependent I–V characteristics , Field effect transistor (FET) , Tunneling conduction at low temperature , Polydiacetylene (PDA) thin film
Journal title
Current Applied Physics
Serial Year
2005
Journal title
Current Applied Physics
Record number
1769735
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