Title of article :
The novel encapsulation method for organic thin-film transistors
Author/Authors :
Lee، نويسنده , , Jung Hun and Kim، نويسنده , , Gi Heon and Kim، نويسنده , , Seong Hyun and Lim، نويسنده , , Sang Chul and Yang، نويسنده , , Yong-Suk and Oh، نويسنده , , Jiyoung and Youk، نويسنده , , Ji Ho and Jang، نويسنده , , Jin and Zyung، نويسنده , , Taehyoung، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2005
Pages :
3
From page :
348
To page :
350
Abstract :
In this study, we report a novel encapsulation method for longevity of an organic thin-film transistor (OTFT) using pentacene by means of an adhesive multiplayer included Al film. For encapsulation of OTFTs, the Al film adhered onto the OTFT in a dry nitrogen atmosphere using a proper adhesive. A lifetime, which was defined as the time necessary to reduce mobility to 2% of initial mobility value, was observed from the typical ID–VD characteristics of the field-effect transistor (FET). The initial field effect mobility, μ, was measured to be 2.0 × 10−1 cm2/V s. The characterization was maintained for long times in air. No substantial degeneration occurred. The performance and the stability are probably due to the encapsulation effect.
Keywords :
OTFT , Organic transistor , passivation , Encapsulation , Lifetime
Journal title :
Current Applied Physics
Serial Year :
2005
Journal title :
Current Applied Physics
Record number :
1769861
Link To Document :
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