Title of article :
Optical band gap and optical constants in a-Se80Te20−xPbx thin films
Author/Authors :
Khan، نويسنده , , Shamshad A. and Zulfequar، نويسنده , , M. and Husain، نويسنده , , M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2005
Pages :
5
From page :
583
To page :
587
Abstract :
The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se80Te20−xPbx (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.
Keywords :
chalcogenides , Amorphous semiconductor , Optical band gap , Thin films , Optical constants
Journal title :
Current Applied Physics
Serial Year :
2005
Journal title :
Current Applied Physics
Record number :
1769978
Link To Document :
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