Title of article
Mesoscopic temporary devices: a multiple tip experiment on a silicon surface
Author/Authors
Müller، نويسنده , , A.-D. and Müller، نويسنده , , F. and Hietschold، نويسنده , , M. and Gessner، نويسنده , , Th.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2005
Pages
4
From page
629
To page
632
Abstract
A cantilever device with two gold coated silicon tips has been used to create two point contacts on a silicon surface. The lateral distance between the tips is 10 μm. The tips are independently movable in vertical direction and the contact force is defined. While the contacts are closed, a complete set of electrical characteristics of the system is measured. An Ohmic current and a field dependent current are found, so the system behaves like a FET. The measured set of curves was fit with a MESFET model. A weak coupling between the bulk material and the current carried through surface states is found.
Keywords
AFM , Silicon , Surface conductivity , MESFET , Multiple tips , Temporary devices
Journal title
Current Applied Physics
Serial Year
2005
Journal title
Current Applied Physics
Record number
1769987
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