• Title of article

    A bonding study of FNO, FON, and (HFNO)+ using topological method

  • Author/Authors

    Alikhani، نويسنده , , M.E.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    6
  • From page
    239
  • To page
    244
  • Abstract
    The molecular properties and nature of the chemical bonding of FNO, FON, FON(TS), and (HFNO)+ are studied using DFT/B3LYP and topological methods. The chemical bonds between the atoms within the molecules are discussed on the basis of the electron density, ϱ(r) and its Laplacian. Molecular graphs, structural stability, and changes in molecular structure are presented from a topological point of view. The reaction path from FON to FNO is also studied. It is shown that the transition structure (FON(TS)) occurs before the topological catastrophe.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    1997
  • Journal title
    Chemical Physics Letters
  • Record number

    1771332