Title of article :
Production and characterization of boron- and silicon-doped carbon clusters
Author/Authors :
Kimura، نويسنده , , Takumi and Sugai، نويسنده , , Toshiki and Shinohara، نويسنده , , Hisanori، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
269
To page :
273
Abstract :
Boron- and silicon-doped carbon clusters of the type BmCn (m = 1−4) and SimCn (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much higher efficiency than Si atoms. The mass spectral evidence is also consistent with the idea that SiCn(n ⩾ 30) and BCn(n ⩾ 30) clusters have a silicon- and boron-heterofullerene structure, respectively.
Journal title :
Chemical Physics Letters
Serial Year :
1996
Journal title :
Chemical Physics Letters
Record number :
1771535
Link To Document :
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