Multiphoton ionization detection of SiF radicals in SiF4 plasmas

A newly constructed plasma molecular beam apparatus has been employed to study SiF radicals produced in a SiF4 plasma. The SiF radicals are detected using [2+1] resonance enhanced multiphoton ionization (REMPI) combined with time of flight mass spectrometry (TOFMS). The absorption band from the (1, 0) C″2∑+←X2Π1/2 transition of the SiF molecule was monitored. Production of SiF in the plasma has been measured as a function of plasma parameters, including addition of H2 and O2, and applied rf power.