Author/Authors :
Yan، نويسنده , , H.F and Xing، نويسنده , , Y.J and Hang، نويسنده , , Q.L and Yu، نويسنده , , D.P and Wang، نويسنده , , Y.P. and Xu، نويسنده , , J and Xi، نويسنده , , Z.H. and Feng، نويسنده , , S.Q، نويسنده ,
Abstract :
Amorphous silicon nanowires (a-SiNW) with an average diameter of ca. 20 nm were synthesized at about 950°C under an Ar/H2 atmosphere on a large area of a (111) Si substrate without supplying any gaseous or liquid Si sources. The Si substrate, deposited with a layer of Ni (ca. 40 nm thick), served itself as a silicon source for the growth of the a-SiNWs. In contrast to the well-known vapor–liquid–solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid–liquid–solid (SLS) mechanism, which is analogous to the VLS model.
