Author/Authors :
Fukui، نويسنده , , Ken-ichi and Lo، نويسنده , , Rong-Li and Otani، نويسنده , , Shigeki and Iwasawa، نويسنده , , Yasuhiro، نويسنده ,
Abstract :
We have succeeded in imaging each surface carbon atom on Mo2C(0001) by scanning tunneling microscopy operated at low tunneling resistances and found a novel selective etching reaction of the surface carbon atoms by oxygen gas exposed at room temperature. On a carbon terminated Mo2C(0001) surface with both (√3×√3)R30°-honeycomb and c(2×4)-zigzag row structures, the etching reaction selectively occurred on the c(2×4)-zigzag row structure, leading to exposure of the underlying (1×1) Mo layer. Energetically excited oxygen formed on the surface is probably responsible for this new reaction event.