Title of article
The bonding mechanism at bimetallic interface: Pd/Ta(110)
Author/Authors
Wu، نويسنده , , Ruqian، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
5
From page
99
To page
103
Abstract
The mechanism responsible for bimetallic bonding in Pd/Ta(110) is investigated using the local density full potential linearized augmented plane wave method with the atomic force approach. A multilayer relaxation in Ta(110) is found to be removed by the Pd adlayer. Charge transfer from the Pd layer to the Ta(110) substrate and the resulting potential barrier in the interfacial region are found to play a significant role. The calculated bonding energy (79 kcal/mol) and the energy shift of the Pd 3d52 core state from that on the clean Pd(001) surface (0.65 eV) agrees well with recent experiments of Goodman et al.
Journal title
Chemical Physics Letters
Serial Year
1995
Journal title
Chemical Physics Letters
Record number
1773735
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