Low energy deposition of size-selected Si clusters onto graphite

Molecular Dynamics simulations have been performed to describe the deposition of size-selected silicon clusters onto a graphite surface. The cluster sizes range from N=9 to N=200 atoms per cluster, deposited with kinetic energies from E=0.5 eV to E=2.0 eV per atom. We find that the clusters remain mainly intact on top of the graphite substrate after deposition. The degree of cluster deformation, i.e., the shape of the cluster on the surface, can be controlled via the deposition energy, from the preservation of a 3D cluster morphology to surface wetting, i.e., formation of commensurate 2D islands.