Author/Authors :
Brüning، نويسنده , , Frank and Matejcik، نويسنده , , Stefan and Illenberger، نويسنده , , Eugen and Chu، نويسنده , , Yannan and Senn، نويسنده , , Gilbert and Muigg، نويسنده , , Daniela and Denifl، نويسنده , , Günter and Mنrk، نويسنده , , Tilmann D، نويسنده ,
Abstract :
Electron attachment to N2O is studied in a beam experiment with high-energy resolution (40 meV fwhm). Two clearly resolved features are observed in the O-yield with peak energies at 0.55 and 2.4 eV due to dissociative electron attachment via two N2O− compound states. The low-energy peak increases dramatically when the gas temperature is raised from 300 to 675 K. From the temperature dependence of the threshold intensity, an activation energy of about 210 meV is obtained for O− formation. A time-of-flight analysis reveals that the translational energy released to O− is remarkably low with a maximum value of 0.23 eV at a primary energy of 2.3 eV.
