Author/Authors :
Guo، نويسنده , , Y.P. and Zheng، نويسنده , , J.C. and Wee، نويسنده , , A.T.S. and Huan، نويسنده , , Cha-Lun Li، نويسنده , , K. and Pan، نويسنده , , J.S. and Feng، نويسنده , , Z.C. and Chua، نويسنده , , S.J.، نويسنده ,
Abstract :
The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC–SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.
