Title of article
Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix
Author/Authors
Guo، نويسنده , , Y.P. and Zheng، نويسنده , , J.C. and Wee، نويسنده , , A.T.S. and Huan، نويسنده , , Cha-Lun Li، نويسنده , , K. and Pan، نويسنده , , J.S. and Feng، نويسنده , , Z.C. and Chua، نويسنده , , S.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
319
To page
322
Abstract
The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC–SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1775822
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