Author/Authors :
McComb، نويسنده , , D.W. and Collings، نويسنده , , B.A. and Wolkow، نويسنده , , R.A. and Moffatt، نويسنده , , D.J. and MacPherson، نويسنده , , C.D. and Rayner، نويسنده , , D.M. and Hackett، نويسنده , , P.A. and Hulse، نويسنده , , J.E.، نويسنده ,
Abstract :
Atomically resolved scanning tunneling microscope images of Si clusters deposited onto a Si(111)-7 × 7 substrate have been obtained. The clusters display a capping layer of widely spaced surface atoms analogous to the reconstructed surface of a bulk crystal. Site-specific variations in the electronic characteristics of cluster surface atoms are detected. Adsorption studies demonstrate size dependant reactivity of deposited clusters. Clusters are observed to collapse upon annealing to form epitaxial Si islands.
