Title of article
An atom-resolved view of silicon nanoclusters
Author/Authors
McComb، نويسنده , , D.W. and Collings، نويسنده , , B.A. and Wolkow، نويسنده , , R.A. and Moffatt، نويسنده , , D.J. and MacPherson، نويسنده , , C.D. and Rayner، نويسنده , , D.M. and Hackett، نويسنده , , P.A. and Hulse، نويسنده , , J.E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
8
To page
12
Abstract
Atomically resolved scanning tunneling microscope images of Si clusters deposited onto a Si(111)-7 × 7 substrate have been obtained. The clusters display a capping layer of widely spaced surface atoms analogous to the reconstructed surface of a bulk crystal. Site-specific variations in the electronic characteristics of cluster surface atoms are detected. Adsorption studies demonstrate size dependant reactivity of deposited clusters. Clusters are observed to collapse upon annealing to form epitaxial Si islands.
Journal title
Chemical Physics Letters
Serial Year
1996
Journal title
Chemical Physics Letters
Record number
1776198
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