Title of article :
Si nanowires grown from silicon oxide
Author/Authors :
Wang، نويسنده , , N. and Tang، نويسنده , , Y.H. and Zhang، نويسنده , , Y.F. and Lee، نويسنده , , C.S and Bello، نويسنده , , I. and Lee، نويسنده , , S.T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
6
From page :
237
To page :
242
Abstract :
Bulk-quantity Si nanowires have been synthesized by thermal evaporation of a powder mixture of silicon and SiO2. Transmission electron microscopy showed that, at the initial nucleation stage, silicon monoxide vapor was generated from the powder mixture and condensed on the substrate. Si nanoparticles were precipitated and surrounded by shells of silicon oxide. The Si nanowire nucleus consisted of a polycrystalline Si core with a high density of defects and a silicon oxide shell. The growth mechanism was proposed to be closely related to the defect structure and silicon monoxide.
Journal title :
Chemical Physics Letters
Serial Year :
1999
Journal title :
Chemical Physics Letters
Record number :
1776355
Link To Document :
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