Absolute generalized oscillator strength profiles of Si 2p shape resonances in SiF4

Absolute generalized oscillator strengths (GOSs) of the Si 2p shape resonances in silicon tetrafluoride (SiF4) have been determined as functions of momentum transfer by angle-resolved electron energy loss spectroscopy at 2.5 keV impact energy. These GOS profiles reveal subtle details about the spectral nature of the underlying dipole-allowed Si 2p→2e and Si 2p→7t2 continuum transitions, particularly with respect to the pre-edge Si 2p→6a1σ∗ resonance. The GOS profiles of the Si 2p shape resonances in SiF4 are compared with those of the corresponding S 2p→2t2g and S 2p→4eg resonances in SF6.